Gold standard for JEDEC® Octal SPI memory device for your IP, SoC, and system-level design verification.
In production since 2012 for dozens of designs.
The Cadence Memory Model Verification IP (VIP) for Flash Octal SPI (OSPI) Flash provides verification of serial flash NOR devices using the SPI protocol. The OSPI VIP is compatible with the industry-standard Universal Verification Methodology (UVM), runs on all leading simulators, and leverages the industry-standard Cadence Memory Model core architecture, interface, and use model.
Supported Specification: Micron, Macronix, Adesto, ISSI, and GigaDevices
Product Highlights
Hundreds of protocol and timing checkers to easily catch design bugs
Hundreds of predefined configurations based on specific memory vendors' part numbers, datasheets, or generic JEDEC definitions available on ememory.com
Transaction and memory callbacks for all protocol, model states, and device memory events
Error injection capability through user modification of transaction contents
Error injection support for ECC
Ability to check for errors and change error severity
Ability to dynamically change configuration parameters
Packet tracker creation for easy debugging
Support testbench language interfaces for SystemVerilog and UVM
Key Features
The following table describes key features from the specification that are implemented in the VIP:
Feature Name
Description
Device Density
From 256Mb to 2Gb, with frequency up to 133MHz in SPI and 200MHz in OSPI mode
Operation Mode
Extended SPI mode, Octal SDR, and DDR mode (Single I/O and Octal I/O)
RESET
Software Reset: RESET and RESETN command, as well as hardware reset using the Reset Pin
Read ID
Read Serial Flash Discoverable parameter
XIP
Execute-in-place (XIP), Fast Boot feature after Power on cycle or Reset
Configuration
Configuration registers Read and Write for volatile and non-volatile registers
Configuration Capability: Volatile and non-volatile configuration register settings to change the mode of the model, Dummy cycles for read commands, 3-byte or 4-byte addressing, Output Drive Strength (ODS), DQS enable and disable, ECC enable and disable, CRC enable and disable, Wrap enable and disable, and Wrap size
Addressing Capability
3-byte and 4-byte address modes enable memory access beyond 128Mb
Commands
Supports Read (SPI), Fast Read, Octal Output Read, Octal I/O Fast Read, DDR Octal Output Fast read, and DDR Octal I/O Fast Read (DDR mode only)
Supports Burst Read by using Set Burst Length command you can set 16-byte, 32-byte, or 64-byte Wrap Bursts for Read commands
Supports Page Program, Sub-Sector Erase with 4KB and 32KB granularity, Sector Erase with uniform granularity and Bulk (Chip) Erase commands
Supports Buffer Write (84h), Buffer Read (D4h), Buffer to Main Memory Page Program without Built-In Erase, WP pin functionalities (signals are shared with I/O pins), Echo (AAh), Echo with Inversion (A5h) (Adesto Specific)
Support Program, Erase Suspend and Resume operations, Support Deep Power Down mode
DDR Center Aligned Read Strobe (DCARS): DQs is driven on 90-degree phase-shifted clock (sclk2) rather than actual clock (sclk)
Timing: Supports Device Input and Output timing and Variants memory operations timing (for Program, Erase, Suspend, and Resume)
Preamble Pattern
Based on the PBE bit value, selected Preamble Pattern will be inputted to the Dummy Cycles
Security and Write Protection
Volatile and nonvolatile locking and software Write Protection for each 128KB sector
Hardware write protection: based non-volatile bits defined protected area size, program and erase protection during power-up, CRC detects accidental changes to raw data
Read While Write
Divides into 2 banks or 4 banks of 0-32Mbit each: while an Erase or Program operation is taking place in one bank, a Read can take place in another
OTP
Readable, user-lockable 64bytes to 8K-bit Security OTP memory outside main memory and permanent lock with PROGRAM OTP command
