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Cadence Process and Proximity Compensation (PPC)  


With the increasing gap between the capabilities of available lithography equipment and the requirements of aggressive device scaling, traditional optical proximity correction (OPC) / resolution enhancement technology (RET) methodologies are not able to keep up with the stringent computational lithography demands. You’ll likely need to work to enhance accuracy and ease-of-use and to accelerate mask cycle time. Coupled with the increasing cost of R&D investment and limited human resources, OPC teams are challenged to deliver better OPC model accuracy and maintain the same mask cycle time for an advanced technology node as they did for the previous technology node. Cadence delivers a complete and comprehensive third-generation mask pattern synthesis solution built from the ground up for correct-by-construction OPC with the fastest mask cycle time.

Cadence® Process and Proximity Compensation (PPC) is a third-generation computational lithography solution suite designed to meet the stringent accuracy, short turnaround time (TAT), and flexible ease-of-use requirements for sub-45nm process technologies. First in the industry to leverage rigorous inversion of the patterning process combined with patented optimization techniques, Cadence PPC delivers correct-by-construction OPC. The Cadence PPC comprehensive RET suite, combined with both the multiple-area source optimization and source mask optimization solutions, maximizes the overall process window for a given depth of focus (DOF). In addition, with complete pipelined distributed processing of all the computational lithography steps, Cadence PPC offers unmatched mask cycle time and the lowest cost of ownership via the use of general-purpose hardware. Cadence PPC is production-proven at 45nm and has delivered the best post-etch CD accuracy and process window on silicon for every critical layer.

Features/Benefits
  • Complete and comprehensive mask pattern synthesis solution meets advanced manufacturing needs
  • Full Process Window Simulation delivers the best post-etch CD accuracy and process window on silicon for every critical layer
  • Production-proven and most accurate industry-leading litho, etches, and mask models provide a “virtual fab” that accurately represents the actual patterning process
  • Physics-based Predictive Process Model (PPMTM) provides rigorous inversion of the patterning process and patented optimization techniques for correct-by-construction OPC
  • Pipelined distributed processing of all mask pattern synthesis steps on general-purpose hardware delivers unmatched mask turnaround time and the lowest cost of ownership (CoO)
  • Pipelined through process window post-etch OPC verification solution is first to market
  • Comprehensive design and manufacturing double patterning technology (DPT) solution supports multiple DPT variants (SADP, LFLE, LELE)
  • Multiple-area source optimization and source mask optimization combined with the hybrid SRAF placement solution maximize overall process window for given DOF
  • GUI or script-based input provide flexibility for recipe creation/optimization

 

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