The device model equations manual describes how the equations work (although it has a few omissions here and there, and sometimes you need to look at the Berkeley site to get the full model equations).
As I said before, you wouldn't expect to see effective information in the model parameters, because these are the input model parameters. You can however get a number of useful effective parameters for each instance by doing a dc operating point and then you'll get the "Operating Point Parameters". See "spectre -h bsim4" and you'll see there's a large number of parameters, including id, ids, vth, betaeff, gm. gds and many capacitances. I don't believe there's any output of effective mobility though.
You should see the effect of STI in the performance/behaviour of the transistors - for example, the id variation in a current mirror caused by STI (as in Bernd's presentation).
(BTW, I'm not sure why the email subject headers are ending up as gobbledegook - I'm guessing it's something to do with either the length of the subject line or the characters in it).