I want to perform noise analysis for my clocked comparator where the input voltages (inp,inn) vary from cycle to cycle. As a result the conditions of the input MOSFETs change. Therefore the noise contribution also changes as it depends on the saturation level (region of operation) and temperature also.
I tried Transient noise analysis under tran simulation. But this analysis gives only the total noise voltage at perticular node. I can only observe the (actual voltage+total randon noise due to all component) at any node at any time (at any instant of total simulation time). But I cant find/separate the nosie contributoin of each components of my comparator.
Is there any way to calculate % of contribution of each components at arbitrary time?
The above picture is the output of an cmos inverter where we can see the total transient noise for several clock cycles. it is obvious that the noise contribution of PMOS for one cycle can be chahged for other cycle (When output is high most of the noise is from PMOS and from NMOS when output is low).
I want to observe the noise contribution of each components for multiple cycles (any time of whole simulation).
Thanks in advance.