Thanks Andrew. Your tip was helpful, but I didn't quite figure out how to use that factor to control st dev of vth. The example I pasted in was actually from another part of the model file and wasn't the best example. Below are all the lines from the model file that I think factor in to vth for the n device.
vary par1 dist=gauss std=1/3
// vary par2 dist=gauss std=1/3
// vary par3 dist=gauss std=1/3
// vary par4 dist=gauss std=1/3
// vary par5 dist=gauss std=1/3
vary vthnmis dist=gauss std=1/1
vary dlnmis dist=gauss std=1/1
vary dwnmis dist=gauss std=1/1
vary toxnmis dist=gauss std=1/1
vary vthpmis dist=gauss std=1/1
vary dlpmis dist=gauss std=1/1
vary dwpmis dist=gauss std=1/1
vary toxpmis dist=gauss std=1/1
In the nch_mc section:
parameters fac_n=1.00 * 2.4
dvthn=a1n * fac_n * 0.0095
in the model section:
vth0=0.4365561 + dvthn
I am using regular nch devices, not the nch_mis devices. When I run the Monte Carlo, the mean and standard deviation of the Vth of an NMOS device with ground and body connected to ground and the drain and gate disconnected are 490mV and 17mV. A std of 2/3 results in std of 34mV. I still don't see how std=1/3 leads to 17mV.
Does this make any sense to you?