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lithography,DRC

  • ARM TechCon: Design at 14nm (or 10nm) – What’s Going to Change

    The next semiconductor process node after 20nm promises tremendous power and performance benefits, but also poses some new challenges, according to a presentation by ARM and IBM at the ARM TechCon conference Oct. 30, 2012. The presentation showed how the "second generation" of double patterning...
    Posted to Industry Insights (Weblog) by rgoering on Fri, Nov 2 2012
  • ARM TechCon Paper: New Methodology Eases Challenges of 32/28nm Designs

    The 32nm and 28nm process nodes, the most advanced nodes currently in production, pose formidable challenges in complexity, power management, variability, and manufacturability. A recent ARM TechCon paper authored by Cadence and Samsung described a methodology that can resolve those challenges. And it's...
    Posted to Industry Insights (Weblog) by rgoering on Wed, Nov 9 2011
  • GLOBALFOUNDRIES DRC+ Donation: New Era for DFM Standards?

    DRC+, a pattern-matching design for manufacturability (DFM) technique developed by GLOBALFOUNDRIES in collaboration with Cadence, is heading for standardization through the Silicon Integration Initiative (Si2). As announced Oct. 20 at the Si2 Conference , GLOBALFOUNDRIES has donated DRC+ data structures...
    Posted to Industry Insights (Weblog) by rgoering on Sun, Oct 23 2011
  • 28 nm IC Design: The Devil Is In The Details

    Smaller process technologies are enticing chip makers with bigger rewards from their end products. The shorter gate lengths at 28nm promise faster transistor speeds and less leakage power, and can double the amount of the logic that can be put into the same die area. Most importantly, however, more die...
    Posted to Digital Implementation (Weblog) by Nora on Mon, Mar 14 2011
  • How DRC Plus Makes DFM Easy at 28nm

    Design for manufacturability (DFM) requirements have been a barrier for many design teams who are thinking about moving to lower process nodes. But can DFM actually get easier as process nodes shrink? That possibility is offered by DRC Plus (DRC+), a new technology developed by GLOBALFOUNDRIES in collaboration...
    Posted to Industry Insights (Weblog) by rgoering on Mon, Oct 25 2010
  • Double Patterning – A Double Edged Sword?

    Double patterning lithography, which splits designs into two or more masks, will probably be required at 22 nm and below. The plus side is that it will extend current optical lithography equipment to yet another process generation. But it will also add some costs, require new EDA tool capabilities, and...
    Posted to Industry Insights (Weblog) by rgoering on Thu, Dec 3 2009
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