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TSMC 2013 Symposium: Progress in 20nm, 16nm FinFET, and 3D-IC Technologies
The TSMC 2013 Technology Symposium , held April 9 in San Jose, California, brought good news for anyone interested in advanced node or 3D-IC technologies. Keynote speakers noted excellent yields and significant progress in 20nm planar, 16nm FinFET, and Chip-on-Wafer-on-Substrate (CoWoS) technologies...
Posted to
Industry Insights
(Weblog)
by
rgoering
on Sun, Apr 14 2013
Common Platform Forum Keynotes: 14nm FinFETs and Beyond
How far can we continue to scale semiconductors? 14nm FinFET technology is the next major move, but that's far from the end of the story, according to keynote speakers at the Common Platform Technology Forum in Santa Clara, California Feb. 5, 2013. The keynotes, still available for on-line viewing...
Posted to
Industry Insights
(Weblog)
by
rgoering
on Wed, Feb 6 2013
Introduction to Cadence Virtuoso Advanced Node Design Environment
What can designers do about advanced node technology? This is an introduction to the Cadence Virtuoso Advanced Node design environment, announced Jan. 28, 2013, as a custom/analog design development environment for leading edge-advanced node technology. Problems of Advanced Node Design When designing...
Posted to
Custom IC Design
(Weblog)
by
Hiro Ishikawa
on Mon, Jan 28 2013
Whitepaper: New Methodology Needed for 20nm Custom/Analog IC Design
Before digital SoC designers take advantage of the power, performance and density advantages of 20nm, custom/analog designers must develop the standard cells and the analog/mixed-signal IP. Thus, no 20nm solution is complete without an integrated custom/analog capability. A newly published Cadence whitepaper...
Posted to
Industry Insights
(Weblog)
by
rgoering
on Tue, Nov 13 2012
Video: Cadence VP Tom Beckley Discusses Advanced Node Custom/Analog Challenges
Any discussion about advanced node (below 28nm) that focuses only on digital design is missing an important part of the story. Custom/analog design must be considered too, and that's the subject of a video interview with Tom Beckley, senior vice president of R&D for Custom IC and Simulation at...
Posted to
Industry Insights
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by
rgoering
on Mon, Nov 5 2012
ARM TechCon: Design at 14nm (or 10nm) – What’s Going to Change
The next semiconductor process node after 20nm promises tremendous power and performance benefits, but also poses some new challenges, according to a presentation by ARM and IBM at the ARM TechCon conference Oct. 30, 2012. The presentation showed how the "second generation" of double patterning...
Posted to
Industry Insights
(Weblog)
by
rgoering
on Fri, Nov 2 2012
Q&A: TSMC R&D VP Cliff Hou Discusses 20nm, CoWoS Multi-Die Packaging, and FinFETs
T he recent TSMC Open Innovation Platform (OIP) 2012 Ecosystem Forum marked the release of 20nm and chip-on-wafer-on-substrate (CoWoS) reference flows, as well as new insights about the giant foundry's plan for 16nm FinFETs. I blogged about the keynote speeches here . Separately, I interviewed one...
Posted to
Industry Insights
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by
rgoering
on Wed, Oct 24 2012
TSMC Forum: An Update on 20nm, 3D-IC, and 16nm FinFETs
TSMC, the world's largest semiconductor foundry, is thinking big when it comes to next-generation process technology. At the TSMC Open Innovation Platform (OIP) Ecosystem Forum Oct. 16, TSMC described reference flows for 20nm and for multi-die integration, and revealed that ARM and TSMC are working...
Posted to
Industry Insights
(Weblog)
by
rgoering
on Wed, Oct 17 2012
20 Questions on 20nm – And a New Resource for Advanced Node Design
If you're currently doing or contemplating IC design at 28nm and below, you no doubt have some questions. One place to get a lot of them answered is an Advanced Node microsite newly launched by Cadence for both digital and custom/analog designers. And one interesting (and new) document you'll...
Posted to
Industry Insights
(Weblog)
by
rgoering
on Thu, Jul 26 2012
Whitepaper: 20nm is More Than Just Double Patterning
Probably the most discussed challenge of the 20nm process node is double patterning, which uses extra masks in order to get lithography equipment to print correctly. That is, indeed, a major change that has impacts throughout the design flow. But as a newly published Cadence whitepaper points out, double...
Posted to
Industry Insights
(Weblog)
by
rgoering
on Mon, Jul 9 2012
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