In general I would set static operating conditions and measure the gate current and the currents in the supply
of the NAND. If you want to get a more detailed view you need to probe the individual currents of the devices
within the NAND, e.g. IGD,IGS,IGB for all devices and IDS for the closed devices. This should give you a
pretty good idea about the leakage mechanisms and the values should be available in the results browser
after a simple DCOP analysis.