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Renesas introduces new 1.1Gbit low-latency DDR DRAM (LLDRAM) for networking apps

Comments(0)Renesas has introduced a new 1.1Gbit, low-latency DDR DRAM (LLDRAM) primarily for networking applications that really need the device’s low 13.3nsec read/write latency. This part is another in the series of LLDRAMs originally developed by NEC. (Renesas and NEC announced a merger agreement last September and have now completed this action.) There are four devices in the 1.1Gbit LLDRAM family: the µPD48011318FF, the µPD48011336FF, the µPD48011418FF, and the µPD48011436FF. the first two devices have burst lengths of 2 and the second two devices have burst lengths of four. Devices ending in 18FF are organized as 64M-by-18-bit DRAMs and the devices ending in 36FF are organized as 32M-by-18-bit DRAMs. Devices with a burst length of 2 have a maximum DDR transfer rate of 600Mtransfers/sec and devices with a burst length of 4 have a maximum DDR transfer rate of 800Mtransfers/sec.

LLDRAMs are fairly specialized, low-volume devices and as a consequence, per-bit costs are substantially higher than for mainstream PC-centric DDR SDRAMs. However, LLDRAMs don’t’ really compete with DDR SDRAMs, they compete against SRAM, which is the real alternative for applications that require low-latency memory. You can read more about low-latency DRAMs in this Denali Memory Report blog entry from last year (“Low Latency DRAMs Continue to Serve Networking Niches”).

Also, if you’re interested in the specialized memory needs of high-speed networking applications and if you’re a customer of LSI Corp, I’m moderating a panel on memory for networking applications at LSI Corp’s Conference and Technology Showcase being held this week in Milpitas, CA.

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